weitron http://www .weitron.com.tw 2N7002KT device marking 2N7002KT = rs n-channel enhancement mode power mosfet sc-89 1 2 3 l e a d( p b)- f r ee p b 1/5 14-sep-09 features: * gate-source esd protected: 1500 v * fast switching speed * low on-resistance * low voltage driver applications: * drivers: relays, solenoids, lamps, hammers,displays, memories * battery operated systems * power supply converter circuits * load/power switching cell phones, pagers ( t op v iew) drain gate 3 1 2 source maximum ratings (t a =25 c unless otherwise specified) characteristic symbol values unit drain-source voltage v dss v gss i d i dp 1 i drp 1 i d p d 2 60 v gate-source voltage continuous continuous continuous 20 v 115 ma drain current pulsed 800 ma 115 ma reverse drain current pulsed 800 ma total power dissipation 225 mw junction temperature range t j 150 c storage temperature range t s t g -55 to +150 c note 1. pw 1 0s, duty cycle 1% 2. when mounted on a 1 x 0.75 x 0.062 inch glass epoxy boa r d
w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w 2N7002KT 2/5 14-sep-09 electrical characteristics (t a =25c unless otherwise specified,per element) characteristic symbol min typ max unit off ch ar a c t eristics(note2) drain-source breakdown voltage v (br)dss i dss i gss 60 - - - - - - - - - - - - - - - v v gs =0v, i d =10a zero gate voltage drain current 1.0 1.0 1.5 2.0 a v ds =60v, v gs =0v gate-source leakage 10 a v gs =20v, v ds =0v on ch ar a c t eristics(note 2 ) gate threshold voltage v gs(th) c iss c oss c rss v v ds =v gs , i d =250a static drain-source on-resistance v gs =10v, i d =0.5a v gs =5v, i d =0.05a r ds(on) 7.5 7.5 forward transfer admittance gfs* 80 ms v ds =10v, i d =0.2a v ds =25v, v gs =0v, f=1.0mhz v ds =25v, v gs =0v, f=1.0mhz v ds =25v, v gs =0v, f=1.0mhz i d =0.2a, v dd =30v v gs =10v, rl=150 , r g =10 i d =0.2a, v dd =30v v gs =10v, rl=150 , r g =10 dy n amic ch ar a c t eristi c s input capacitance 25 50 10 25 3.0 5.0 pf output capacitance reverse transfer capacitance switching ch ar a c t eristi c s turn-on delay time t d(on) * t d(off) * 12 20 ns 20 30 *pw 300s, duty cycle 1%
w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w 2N7002KT 3/5 14-sep-09 characteristics curve
w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w 4/5 14-sep-09 characteristics curve 2N7002KT
unit:mm sc-89 outline demensions a 1 2 3 b g d j n m k c t o p v i e w s dim a b c d g j k m m i n 1 . 5 0 0 . 7 5 0 . 6 0 0 . 2 3 nom 1.60 0.85 0.70 0.28 max 1.70 0.95 0.80 0.33 sc-89 0.50bsc 0.10 0.15 0.20 0.30 1.50 0.40 0.50 --- --- --- --- 10 10 n s 1.60 1.70 2N7002KT w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w 5/5 14-sep-09
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